中国实用口腔科杂志

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半导体激光对牙龈卟啉单胞菌抗菌作用实验研究

王丹宁张燕婷赵宝红邓春富   

  1. 中国医科大学口腔医学院·附属口腔医院种植中心,辽宁省口腔医学研究所,辽宁  沈阳  110002
  • 出版日期:2016-10-15 发布日期:2016-12-15
  • 基金资助:

    辽宁省自然科学基金(20092093);辽宁省科技计划项目(2013225049);沈阳市科技计划项目基金(F11-264-1-25)

  • Online:2016-10-15 Published:2016-12-15

摘要:

目的    评价半导体激光照射对牙龈卟啉单胞菌(P. gingivalis)的抗菌作用。方法    研究于2016年3—5月在中国医科大学附属口腔医院中心实验室进行。应用半导体激光对接种在钛片表面的P. gingivalis进行照射,功率参数分别为1.5、2.0、3.0 W,照射时间分别为40 s和80 s,间断照射,照射后通过扫描电镜和平板菌落计数法观察细菌的形态和数量变化。结果    通过激光照射,细菌数量大幅下降,细菌出现溶解、破裂,随着照射功率的增加和照射时间的延长,抗菌作用逐渐增强。结论    半导体激光对P. gingivalis有很好的抗菌作用,增加照射功率和时间有助于抗菌效果增强。

关键词: 半导体激光, 牙龈卟啉单胞菌, 抗菌作用, 种植体周围炎

Abstract:

Objective    To evaluate the antibacterial effect of the semiconductor laser irradiation on P. gingivalis. Methods    P. gingivalis on the titanium surface was irradiated with the semiconductor laser. The energy parameters were respectively 1.5,2.0,3.0 and the irradiation time was 40s and 80s with intermittent irradiation. The scanning electron microscope(SEM)and film coating method were used to observe the changes of number and morphology of the bacteria after irradiation. Results    The number of bacteria decreased significantly,and the bacteria appeared to be dissolved and broken by laser irradiation. The antibacterial effect was gradually increased with the increase of irradiation energy and irradiation time. Conclusion    The semiconductor laser has a good antibacterial effect on P. gingivalis,which increases with the energy and the time.

Key words: semiconductor laser, P. gingivalis, antibacterial effect, peri-implantitis